RF MEMS for Commercial and Defense Applications

SpeakerDr. Gabriel M. Rebeiz
Organization The University of Michigan, Ann Arbor
Location136 EGRC
Start Date November 17, 2004 3:30 PM
End Date November 17, 2004 5:00 PM

The development of RF MEMS switches has accelerated considerably over the past several years, and currently there are several switches which have been tested to 50-100 billion cycles with no failures. However, it is still hard to package these devices, and fundamental questions regarding the need of a hermetic package and the failure modes of RF MEMS switches under high power conditions are not well understood. The talk will present the latest work in high isolation switch networks, phase shifters and tunable filters. It will also present detailed modeling on the intermodulation distortion of MEMS devices and how they are 60-90 dB better than GaAs devices. The talk will conclude with the latest research areas in RF MEMS switches, varactors and tunable networks.

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