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Wide BandGap Power Device Development in Japan
| Speaker | Dr. Ohashi and Dr. Mochizuki |
|---|---|
| Organization | AIST, Japan |
| Location | 1250 Partner I |
| Start Date | March 2, 2007 1:00 PM |
| End Date | March 2, 2007 2:00 PM |
Dr. Hiromichi Ohashi joined Toshiba R&D Center in 1969. He was involved in the research of power devices and ICs. Since 1994, he had been responsible for power devices R&D as a senior fellow. He was a professor of Tokyo Institute of technology in 2002. Since 2003 he has been deputy director of power electronics research center in the National Institute of Advanced Industrial Science and Technology.
He authored over 80 papers and has 86 patents in GTO, IGBT ,LTT, SOI and so on. He awarded The Purple Ribbon Award from Japan Government in 1999. He is a general chairman of 1995 ISPSD.
Dr. Kazuhiro Mochizuki joined Hitachi, Ltd., Tokyo, Japan in 1988. He had worked on GaAs HBTs used in optical-fiber and mobile communication, and authored 70 research papers. Since 2006, he has been on loan to R&D Association for Future Electron Devices.
Dr. Kazuhiro Mochizuki joined Hitachi, Ltd., Tokyo, Japan in 1988. He had worked on GaAs HBTs used in optical-fiber and mobile communication, and authored 70 research papers. Since 2006, he has been on loan to R&D Association for Future Electron Devices.
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