| ECE 557 |
Principles Of MOS Transistors |
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MOS capacitor and transistor regions of operation. Depletion and enhancement mode MOSFETs. MOSFET scaling, short and narrow channel effects. MOSFETs with ion-implanted channels. High field effects in MOSFETs with emphasis on recent advances in design of hit carrier suppressed structures. Small and large signal MOSFET models. State of the art in MOS process integration. |
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| Pre-Requisites: | ECE 404 |
| Co-Requisites: | None |
| Restrictions: | None |
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Credits: 3
Spring '10 Instructors: Misra V
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