NC State University

Publications

Refereed Journal Papers

2008
  1. Rahul Suri, Daniel J. Lichtenwalner, and Veena Misra, "Impact of elemental arsenic on electrical characteristics of metal oxide semiconductor capacitors on GaAs using atomic layer deposited HfO2 dielectric", Applied Physics Letters, Vol. 92, 243506, June 2008.
  2. Smita Sarkar, Arun Suresh, Frank B. Myers, John F. Muth, and Veena Misra, "Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectrics", Applied Physics Letters, Vol. 92, 223304, June 2008.
  3. Yong Luo, Yan Du, and Veena Misra, "Large area nanorings fabricated using an atomic layer deposition Al2O3 spacer for magnetic random access memory application", Nanotechnology, Vol. 19, 265301, April 2008.
2007
  1. Saurabh Chopra, Mehmet C. Ozturk, V. Misra, Zhongqiao Ren, and L. E. McNeil, "The effects of nickel germanisilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon", Applied Physics Letters, Vol. 91, 142118, October 2007.
  2. Zhong Chen, Bongmook Lee, Smita Sarkar, Srivardhan Gowda and Veena Misra, "A molecular device formed by HfO2 encapsulation of redox-active molecules", Applied Physics Letters, Vol. 91, 173111, October 2007.
  3. Bongmook Lee, Nivedita Biswas, Steven R. Novak and Veena Misra, "Characteristics of Ni-Gd FUSI Gates for NMOS Gate Electrode Applications", IEEE Electron Device Letter, Vol. 28, Issue 7, July 2007.
  4. Srivardhan Gowda, Guru Mathur and Veena Misra, "Investigation Molecule interaction with p and n -Si substrates: A valence band model for tunneling", Applied Physics Letters, Vol. 90, n 14, April 2007.
2006
  1. S. Chopra S, M.C. Ozturk MC and V. Misra, "Critical thickness of heavily boron-doped silicon-germanium alloys", Applied Physics Letters, Vol. 89, n 20, Nov 13 2006
  2. Y. Luo and V. Misra, "Large-area long-range ordered anisotropic magnetic nanostructure fabrication by photolithography", Nanotechnology, v 17, n 19, Oct. 2006, p 4909-4911
  3. B. Chen, R. Jha, and V. Misra, "Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys", IEEE Electron Device Letters, v 27, n 9, Sept. 2006, p 731-3
  4. S. Gowda, G. Mathur, Q. Li, S. Surthi, and V. Misra, "Hybrid silicon/molecular FETs: a study of the interaction of redox-molecules with silicon MOSFETs", IEEE Transactions on Nanotechnology, V 5, n 3, May 2006, p 258-64.
  5. Lichtenwalner DJ, Jur JS, Jha R, N Inoue, B. Chen, V. Misra and A. Kingon, "High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes", Journal of the Electrochemical Society 153 (9): F210-F214 2006
  6. Saurabh Chopra, Mehmet Ozturk, Veena Misra, Kris McGuire and Laurie McNeil, "Analysis of boron strain compensation in Silicon-germanium alloys by Raman Spectroscopy", Applied Physics Letters 88, 202114, 2006.
  7. Bei Chen, Rashmi Jha, Heather Lazar, Nivedita Biswas, Jaehoon Lee, Bongmook Lee, L. Wielunski, E. Garfunkle, and Veena Misra, "Influence of oxygen diffusion through capping layers of low work function metal gate electrodes", IEEE Electron Device Letters, v 27, n 4, April 2006, p 228-30.
  8. Bei Chen, Nivedita Biswas and Veena Misra, "Electrical and physical analysis of MoTa alloy for gate electrode applications", Journal of the Electrochemical Society, v 153, n 5, p G417-19, May 2006.
2005
  1. Srivardhan Gowda, Guru Mathur, Qiliang Li, Shyam Surthi and Veena Misra, "An approach for investigating lateral conductivity in self assembled monolayers" Applied Physics Letters, 87, 262115, 2005.
  2. Rashmi Jha, Jaehoon Lee, Prashant Majhi and Veena Misra, "Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications", Applied Physics Letters, v 87, n 22, 28, p 223503-1-3, Nov. 2005.
  3. Y. S. Suh, H.R. Lazar, B. Chen, J.H. Lee and V. Misra, "Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes," Journal of the Electrochemical Society, 152 (9): F138-F141 2005.
  4. C.K. Lee, J.Y Kim, S.N. Hong, H.C. Zhong, B. Chen and V. Misra "Properties of Ta-Mo alloy gate electrode for n-MOSFET" Journal of Materials Science 40 (9-10), 2693-2695, May 2005.
  5. Guru Mathur, Sriv Gowda, Qiliang Li, Surthi, Qian Zhao and Veena Misra, "Properties of functionalized redox-active monolayers on thin silicon dioxide-a study of the dependence of retention time on oxide thickness", Nanotechnology, IEEE Transactions on Volume 4, Issue 2, Page(s):278 - 283, March 2005.
  6. Bei Chen, Youseok Suh, Jaehoon Lee, Jason Gurganus, Veena Misra, and Cyril Cabral, Jr. , "Physical and electrical analysis of RuY alloys for gate electrode applications", Applied Physics Letters 86, 053502, 2005.
  7. Yanxia Lin, Bei Chen, Mehmet Ozturk and Veena Misra, "Impact of Ge on Integration of HfO2 and Metal Gate Electrodes on Strained Si Channels," Applied Physics Letters 87, 071903, 2005.
  8. Nivedita Biswas, Jason Gurganus, Veena Misra, Yan Yang, and Susanne Stemmer, "Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application", Applied Physics Letters, 86, 022105, 2005.
  9. Nivedita Biswas, Jason Gurganus and Veena Misra, "Work Function Tuning of NiSi by Co-Sputtering Ni and Si", Applied Physics Letters, 091542, Oct 17, 2005.
  10. Qian Zhao, Yong Luo, Shyam Surthi, Guru Mathur, Sriv Gowda, Preston Larson, MB Johnson and Veena Misra, "Redox-Active monolayers on nano-scale silicon electrodes", Nanotechnology 16 (2): 257-261 Feb 2005.
2004
  1. Qiliang Li, Shyam Surthi, Guru Mathur, Srivardhan Gowda, Qian Zhao, Thomas A. Sorenson, Robert C. Tenent, Kannan Muthukumaran, Jonathan S. Lindsey, and Veena Misra, "Multiple-bit storage properties of porphyrin monolayers on SiO2", Applied Physics Letters, 85, 1829, 2004.
  2. Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra and J.C. Lee, "Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure", Microelectronics Reliability 44 (9-11): 1513-1518 Sep-Nov 2004
  3. C.M. Carcel, J.K. Laha, R.S. Loewe, P. Thamyongkit, K.H. Schweikart, V. Misra, D.F. Bocian, J.S. Lindsey, "Title: Porphyrin architectures tailored for studies of molecular information storage", Journal of Organic Chemistry, 69 (20): 6739-6750 Oct 1 2004.
  4. Z.M. Liu, A.A. Yasseri, R.S. Loewe, A.B. Lysenko, V.L. Malionovskii, Q. Zhao, S. Surthi, Q. Li, V. Misra, J.S. Lindsey and D.F. Bocian, ,"Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100)", Journal of Organic Chemistry.,69 (17): 556,8-5577 Aug 20 2004
  5. K. Muthukumaran, R.S. Loewe, A. Ambroise, S.I. Tamaru, Q.L. Li, G. Mathur, D.F. Bocian, V. Misra, J.S. Lindsey, "Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces", Journal of Organic Chemistry, 69 (5): 1444-1452 Mar 5 2004
  6. R.S. Loewe, A. Ambroise, K. Muthukumaran, K. Padmaja, A.B. Lysenko, G. Mathur, Q. Li, D.F. Bocian, V. Misra, J.S Lindsey, "Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces", Journal of Organic Chemistry, 69 (5): 1453-1460 Mar 5 2004
  7. Z.Q. Chen, V. Misra, R.P. Haggerty and S. Stemmer, "Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS", Physica Status Solidi B, 241 (10): 2253-2267 Aug 2004
  8. Rashmi Jha, Jason Gurganos, Y.H. Kim, R. Choi, Jack Lee and Veena Misra "A Capacitance Based Methodology for Work Function Extraction of Metals on High-K", IEEE Electron Device Letters, 2004
  9. You-Seok-Suh; G. Heuss, and V. Misra "Characteristics of TaSiN thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices" Journal of Vacuum Science-&-Technology B Microelectronics and Nanometer Structures. Jan. 2004; 22(1): 175-9.
  10. Q. Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L.H. Yu, J.S. Lindsey, D.F. Bocian and V. Misra, "Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon", Advanced Materials, 16 (2): Jan 16 2004
2003
  1. Kingsuk Maitra and Veena Misra, "A simulation study to evaluate the feasibility of midgap work function metal gates in 25 nm bulk CMOS", IEEE Electron Device Letters, Vol. 24 , Issue 11, Nov. 2003, pp. 707 - 709
  2. You-Seok Suh, Greg P. Heuss, Jae-Hoon Lee and Veena Misra, "Effect of Composition on the Electrical Properties of TaSiN Metal Gate Electrodes", IEEE Electron Device letters, July 2003.
  3. Y-S. Suh, G.P. Heuss, V. Misra, D.G. Park, K.Y. Lim, "Thermal stability of TaSi/sub x/N/sub y/ films deposited by reactive sputtering on SiO2", Journal-of-the-Electrochemical-Society. May 2003; 150(5): F79-82.
  4. Qiliang Li, Shyam Surthi, Guru Mathur, Srivardhan Gowda, and Veena Misra , Thomas A. Sorenson, Robert C. Tenent, and Werner G. Kuhr, Shun-ichi Tamaru and Jonathan S. Lindsey, Zhiming Liu and David F. Bocian "Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications", Applied Physics Letters, Volume 83, Issue 1, pp. 198-200, July 7, 2003.
2002
  1. V. Misra, H. Zhong and H. Lazar, "Electrical Properties of Ru-Based Alloy Gate Electrodes for Dual Metal Gate Si-CMOS", IEEE Electron Device Letters, pp.354-6, Jun. 2002.
  2. Q. Li, G. Mathur, M. Homsi, S. Surthi and V. Misra, J. Lindsey, D. Bocian and W. Kuhr et al., "Capacitance a d Conductance Characterization of Ferrocene-Containing Self-Assembled Monolayers on Silicon Surfaces for Memory Applications" Applied Physics Letters, 81(8), pp. 1494-6, 2002.
  3. Y-S. Suh, G.P. Heuss and V. Misra, "Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler-Nordheim current analysis", Applied Physics Letters. vol. 80, no.8; 25, pp. 1403-5, 2002.
  4. Veena Misra, Gerry Lucovsky and Greg Parsons, MRS Bulletin Issue, Volume 27, No. 3, pp. 212-216, Mar. 2002
2001
  1. H. Zhong, G.P. Heuss and V. Misra, "Characterization of RuO2 Electrodes on ZrSiO4 and ZrO2 Dielectrics for Si-PMOSFETs", Applied Physics letters, 78(8), pp.1134-6, Feb. 2001.
  2. V. Misra, G.P. Heuss, H. Zhong, "The use of MOS Capacitors to Detect Interactions of Hf and Zr gate with SiO2", Applied Physics Letters, 78(26), pp. 4166-8, Jun. 2001.
  3. H. Lazar, V.Misra, R. Johnson and G. Lucovsky, "Characteristics of Metal Organic Remote Plasma CVD Al2O3 Gate Stacks on SiC MOS Devices" Applied Physics Letters, 79(7) pp. 973-5, Aug. 2001.
  4. C.E. Weintraub, E. Vogel-E, J.R. Hauser, N. Yang, V. Misra, J.J. Wortman, J. Ganem, P. Masson, "Study of low-frequency charge pumping on thin stacked dielectrics", IEEE Transactions on Electron Devices, vol.48, no.12; pp. 2754-62, Dec. 2001.
  5. H. Zhong and V. Misra, "Characteristics of Ru and RuO2 on high-K Dielectrics", Journal of Electronic Materials, Vol 30, 12, pp. 1493-1498, Dec. 2001
  6. V. Misra, M. Kulkarni and H. Zhong, "N and P Metal Oxide Semiconductor Field Effect Transistor Characteristics of Hafnium-Doped SiO2 Gate Dielectrics", Journal of Electronic Materials, Vol 30, 12, pp. 1499-1505, Dec. 2001.
2000~1993
  1. H. Zhong, G.P. Heuss and V. Misra, "Electrical Properties of RuO2 gates for Dual Gate CMOS," IEEE Electron Device Letters, pp. 593-5, Dec. 2000.
  2. Z. Wang, C. Parker, D. Hodge, R. Croswell, N.Yang, V. Misra, and John R. Hauser, "Effect of Polysilicon Gate Type on the Flatband Voltage Shift for Ultrathin Oxide-Nitride Gate Stacks" IEEE Electron Device Letters, Vol 21 no 4, pp. 170-2, 2000.
  3. V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J.J. Wortman, and J.R. Hauser, "Interfacial Properties of Ultra-Thin Pure Silicon Nitride formed by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. B, vol. 17, pp. 1836-1839, July/Aug. 1999.
  4. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips, "Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics", Applied Physics Letters Apr 5, pp. 2005-7, 1999.
  5. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips, "Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics", J. Vac. Sci. Technol. B, vol.17, no.4, p.1806-12, July 1999
  6. I. Ban, M. Ozturk, V. Misra, J. Wortman, D. Venables and D. Maher, "A low thermal budget in-situ doped mutilayer silicon epitaxy process for MOSFET channel engineering", Journal of the Electrochemical Society, Vol 146, No 3, pp. 1189-96, 1999.
  7. P. Morfouli, G. Ghibaudo, E. Vogel, W. Hill, V. Misra, P. McLarty, J. Wortman, " Electrical and reliability properties of thin silicon oxynitride dielectrics formed by low pressure rapid thermal chemical vapor deposition", Solid-State-Electronics. vol.41, no.7, pp. 1051-5, July 1997.
  8. V. Misra, W.K. Henson, E.M. Vogel, G.A. Hames, J.R. Hauser and J.J. Wortman, "Electrical Properties of Composite Gate Oxides formed by Rapid Thermal Processing", Transactions on Electron Devices, pp. 636-46, Apr. 1996.
  9. V. Misra, X-L. Xu, G.A. Hames, R.T. Kuehn, D.S. Miles, P.K. McLarty, J. R. Hauser and J.J. Wortman, "Formation of High Quality Gate Dielectrics by Rapid Thermal Chemical Vapor Deposition," Journal of Electronic Materials, vol.25, no.3, pp. 527-35 March 1996.
  10. P. Morfouli, G. Ghibaudo, T. Ouisse, E. Vogel, V. Misra, P. McLarty, J. Wortman, "Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films" IEEE Elec. Dev. Lett, vol 17, no 8, pp. 395-7, 1996.
  11. E. Vogel, W. Hill, V. Misra, P. McLarty, J. Wortman, J. Hauser, P. Morfouli, G. Ghibaudo, T. Ouisse, "Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical", IEEE Trans. Elect. Dev. vol.43, no.5, pp. 753-8, 1996.
  12. W. Hill, E. Vogel, V. Misra, P. McLarty and J. Wortman, " Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs", IEEE Trans. Elect. Dev. vol.43, no.1, pp.15-22, 1996.
  13. S. Sridevan, V. Misra, P. McLarty, B. Baliga, J. Wortman, "Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide," IEEE Electron Device Letters. Vol.16, no.11, pp. 524-6, 1995.
  14. P.K. McLarty, V. Misra, W. Hill, J.J. Wortman and J.R. Hauser, "On the Mobility of N-channel Metal-Oxide-Semiconductor Transistors Prepared by Low-Pressure RTCVD", Applied Physics Letters, 66, 1, 2, pp.73-5, 1995.
  15. G. Lucovsky, V. Misra, S. Hattangady, T. Yasuda, J. Wortman, " Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processing", Journal-of-Non-Crystalline-Solids. vol.187; pp. 60-5, 1995.
  16. W. Hill, E. Vogel, P. McLarty, V. Misra, J. Wortman, V. Watt, "N-channel and p-channel MOSFETs with oxynitride gate dielectrics formed using low pressure rapid thermal chemical vapor deposition", Microelectronic-Engineering. vol.28, no.1-4, pp. 269-72, 1995.
  17. P. McLarty, S. Cristoloveanu, O. Faynot, V. Misra, J. Hauser, J. Wortman, "A simple parameter extraction method for ultra-thin oxide MOSFETs", Solid State Electronics. vol.38, no.6; pp. 1175-7., 1995.
  18. G. Lucovsky, Y. Ma, S.V. Hattangady, D.R. Lee, Z. Lu, V. Misra, J. Wortman, Z. Jing, J.L. Whitten, "Integration of plasma-assisted and rapid thermal processing for low-thermal budget preparation of ultra-thin dielectrics for stacked-gate device structures", Japanese-Journal of Applied Physics,-Part-1, vol.33, no.12B, pp.7061-70, 1994
  19. V. Misra, S.V. Hattangady, T. Yasuda, X-L. Xu, B. Hornung, G. Lucovsky and J.J. Wortman, "Low-Temperature Plasma-Assisted Oxidation combined with In-situ Rapid Thermal Oxide Deposition for Stacked Gate Si-SiO2 Heterostructures: Integrated Processing and Device Studies", J. Vac. Sci. Technol. A. 12(4) pp. 1371-9, Jul/Aug 1994.
  20. G. Lucovsky, J.J. Wortman, T. Yasuda, X-L. Xu, V. Misra, S.V. Hattangady, Y. Ma and B. Hornung, "Formation of Si-SiO2 Stacked Gate Structures by Plasma Assisted and Rapid Thermal Processing Improved Device Performance Through Process Integration", J. Vac. Sci Technol. B. 12(4) pp. 2839-47, Jul-Aug 1994.
  21. V. Misra, S. Hattangady, X.-L Xu, M. Watkins, B. Hornung, G. Lucovsky, J. Wortman, U. Emmerichs, C. Meyer. K. Leo and H. Kurz, "Integrated processing of stacked-gate heterostructures: Plasma-assisted low temperature processing combined with rapid thermal high-temperature processing", Microelectronic-Engineering. vol.25, no.2-4, pp. 209, 1994.
  22. G. Lucovsky, T. Yasuda, Y. Ma, S. Hattangady, V. Misra, X-L. Xu, B. Hornung, and J.J. Wortman, "Low Temperature Plasma Assisted Oxidation of Si- A New Approach for Creation of Device Quality Si-SiO2 Interfaces with Deposited Dielectrics For Applications in Si MOSFET Technologies", J. Non-Crystalline Solids, 179, pp. 354-366, 1994.
  23. P. McLarty, W. Hill, X. Xu, V. Misra, J. Wortman, G. Harris, "Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition", Applied Physics Letters vol.63, no.26, pp. 3619-21, 1993.
  24. X-L. Xu, V. Misra, M. Ozturk, J. Wortman, G. Harris, D. Maher, L. Spanos, E. Irene, " Effects of oxygen doping on properties of microcrystalline silicon film grown using rapid thermal chemical vapor deposition", Journal-of-Electronic-Materials. vol.22, no.11, pp.1345-51, 1993.
  25. X-L. Xu, P. McLarty, H. Brush, V. Misra, J. Wortman, G. Harris, "Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition", Journal-of-the-Electrochemical-Society. vol.140, no.10, pp. 2970-4, 1993.


Refereed Conference Proceedings

  1. Bongmook Lee, Danel J. Lichtenwalner, Melody Agustin, Reze Arghavani, Xianmin Tang, Srinivas Gandikota, victor Ku, and Veena Misra, "Investigation of VT shift mechanism of high-k dielectrics caused by Lanthanum Capping for NMOS and Tantalnum Capping for PMOS Devices", ECS Tansactions, Vol. 13 (1), pp 123-130, 2008.
  2. Bongmook Lee, Steven R. Novak, Nivedita Biswas and Veena Misra, "Effect of Gadolinium (Gd) incorporation in NiSi FUSI gate / High-K dielectric via Electrical and Structural Modification of the Gate Stack", IEEE SISC, Washington D.C, 2007.
  3. V. Misra, R. Jha, B. Chen, J. Lee, and B. Lee, "Issues on metal gate integration on high-K dielectrics", Proceedings of the Electrochemical Society, 2006.
  4. N. Biswas, B. Lee and V. Misra, "Phase and composition impact of NiSi alloys on workfunction", Proceedings of the Electrochemical Society, 2006.
  5. N. Biswas, S. Novak, M.C. Ozturk and V. Misra, " NixTa1-xSi and NixPt1-xSi Ternary Alloys for Work Function Tuning on SiO2, HfSiOx and HfO2 Dielectrics", Proceedings of the IEEE International Electron Device Meeting, 2005.
  6. R. Jha, B. Lee, B. Chen. S. Novak, J. Lee, P. Majhi and V. Misra, "Dependence of PMOS Metal Work Functions on Surface Conditions of High-K Gate Dielectrics", Proceedings of the IEEE International Electron Device Meeting, page 295-298, 2005.
  7. N. Biswas, S. Novak, B. Lee, B. Chen and V. Misra, "Work function tuning of nickel silicide by varying nickel and silicon composition", Proceedings of 2005 Electrochemical society symposium, Los Angeles, Oct 2005.
  8. G. Mathur, S. Gowda and Veena Misra, "Threshold Voltage Assisted Retention of Redox Active Molecules on Si", 2005 IEEE Nano, Nagoya Japan, July 2005. This paper was presented the best student paper award.
  9. S. Gowda, G. Mathur, Q. Li, S. Surthi, Q. Zhao, J.S. Lindsey, D.F. Bocian and V. Misra, "Modulation of drain current by redox-active molecules incorporated in Si MOSFETs", Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International 13-15 Dec. 2004 Page(s):707 - 710
  10. R. Jha, J.H. Lee, B. Chen, H. Lazar, J. Gurganus, N. Biswas, P. Mahji. G. Brown and V. Misra, "Evaluation of Fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure", Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International 13-15 Dec. 2004 Page(s):295 - 298
  11. Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra and J. Lee, "Effects of Barrier Height and the Nature of Bi-layer Structure on the Reliability of High-K Dielectrics with Dual Metal Gate (Ru and Ru-Ta Alloy)", IEEE Symposium on VLSI Technology, 2004.
  12. G. Mathur, S. Gowda, Q. Li, S. Surthi, S. Tamaru, J. Lindsey and V. Misra, "Hybrid CMOS/molecular memories using redox-active self-assembled monolayers", IEEE-NANO 2003, Volume: 1 , 12-14 Aug. 2003 Pages:307 - 310 vol.2
  13. Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra and J.C. Lee, "Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes HfO2 MOS devices", Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International 25-29 April 2004 Page(s):595 - 596
  14. JaeHoon Lee; You-Seok Suh; Lazar, H.; Jha, R.; Gurganus, J.; Yanxia Lin; Misra, V.; "Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International , 8-10 Dec. 2003 Pages:13.5.1 - 13.5.4
  15. Gowda, S.; Mathur, G.; Qiliang Li; Surthi, S.; Qian Zhao; Lindsey, J.S.; Mobley, K.; Bocian, D.F.; Misra, V, "Hybrid silicon/molecular memories: co-engineering for novel functionality" Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International , 8-10 Dec. 2003 Pages:22.1.1 - 22.1.4
  16. JaeHoon Lee, Huicai Zhong, You-Seok Suh, Greg Heuss, Jason Gurganus, Bei Chen and Veena Misra, "Tunable Work Function Dual Metal Gate Technology for Bulk and Non-Bulk CMOS", IEEE International Electron Device Meeting, 2002.
  17. You-Seok Suh, Greg Heuss, Jaehoon Lee and Veena Misra, "The effects of nitrogen on electrical and structural properties of TaSiN/SiO2/P-Si MOS Capacitors", Silicon materials- Processing, Characterization and Reliability Symposium, Materials Research Society, Vol716, p413-418, 2002.
  18. Huicai Zhong, Greg Heuss, Youseok Suh, V. Misra, S.-N Hong, Jason Kelly and G. Parsons, "Promising gatestacks with Ru and RuO2 gate electrodes and Y-silicates", Gate Stack and Silicide Issues in Silicon Processing II. Materials Research Society Symposium Proceedings, Vol 670, pp K.3.1.1-11, 2002.
  19. Huicai Zhong, Shin-Nam Hong, You-Seok Suh, Greg Heuss and Veena Misra, "Properties of Ru-Ta Alloys as Gate Electrodes for NMOS and PMOS Silicon Devices," IEEE International Electron Device Meeting, pp. 467-70, 2001.
  20. You-Seok Suh, G.P. Heuss, H. Zhong and V.Misra, "Electrical characteristics of TaSiN for Dual Gate CMOS", IEEE Symposium on VLSI Technology, pp. 47-48, 2001.
  21. Veena Misra, Huicai Zhong, Greg Heuss, You-Seok Suh, "Gate Electrode Selection Process for Advanced CMOS Devices", MRS international Workshop on Advanced Dielectrics, Brazil, September, 2001.
  22. H. Lazar, V. Misra, Z. Wang, M. Kulkarni, W. Li, M. Mahler and J. R. Hauser. "Interfacial Properties of Si-Si3N4 Formed by Remote Plasma and Rapid Thermal Processing," Electrochemical Society Proceedings: Advances in Rapid Thermal Processing, vol 99 -10, p. 95 -102, 1999.
  23. V. Misra, H. Lazar, M. Kulkarni, Z. Wang, G. Lucovsky, J.R. Hauser "Interfacial properties of Si-Si/sub 3/N/sub 4/ formed by remote plasma enhanced chemical vapor deposition", Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics. Symposium. Materials Research Society, Warrendale, PA, USA; pp. p.89-100, 1999.
  24. M. Woo et al, "A high performance 3.97 micron CMOS SRAM Technology using Self-Aligned Local Interconnect and Copper Interconnect Metallization", IEEE Symposium on VLSI Technology, pp. 12-13, 1998.
  25. S. Venkatesan et al, "Integration of multi-level copper metallization into a high performance sub-0.25 micron CMOS technology", Proceedings of the 1998 Second IEEE International Conference on Devices, Circuits and Systems, ICCDCS 98. p 146-52, 1998.
  26. I. Yang, "Optimization of a 0.18micron 1.5V CMOS technology to achieve 15 ps gate delay", IEEE Symposium on VLSI Technology, pp. 148-9, 1998.
  27. N. Bhat, et. al., " Performance, Standby power and manufacturability trade off in transistor design consideration for 0.25micron technology", Proceedings of the SPIE-The International Society for Optical Engineering, V 3506, p 167-174, 1998.
  28. P. Tsui, et al., "A manufacturable and modular 0.25micron CMOS platform technology", IEEE Symposium on VLSI Technology, pp. 152-3, 1998.
  29. S. Venkatesan, A.V. Gelatos, V. Misra, B. Smith, R.Islam et al., "A High Performance 1.8V, 0.20micron CMOS Technology with Copper Metallization", IEEE International Electron Devices Meeting p 769-72, 1997.
  30. B. Maiti, P. Tobin, V. Misra, R. Hedge, K. Reid, C. Gelatos, "High performance 20A NO oxynitride for gate dielectric in deep subquarter micron CMOS technology," IEEE International Electron Devices Meeting, p 651-4, 1997.
  31. A. Das, D. Newmark, I. Clejan, M. Foisy, M. Sharma, S. Venkatesan, S. Veeraraghavan, V. Misra, B. Gadepally, L. Parrilo, " An advanced MOSFET design approach and a calibration methodology using inverse modeling that accurately predicts device characteristics", International Electron Devices Meeting, p 687-90, 1997.
  32. A. Das, H. De-V. Misra, S. Venkatesan, S. Veeraraghavan, M. Foisy, "Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFETs", 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual. IEEE, New York, NY, USA; p.189-93 1998.
  33. V. Misra, H. Heinisch, W.K. Henson, B.E. Hornung, J.J. Wortman, "Formation of stacked gate oxides by rapid thermal processing", Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO? Interface. The Physics and Chemistry of SiO2 and the Si- SiO2 Interface - 3 1996. Electrochem. Soc, Pennington, NJ, USA; p.282-94, 1996.
  34. S. Sridevan, V. Misra, P.K. McLarty, B.J. Baliga, J.J. Wortman, "High quality oxides on 6H-silicon carbide using rapid thermal chemical vapor deposition", Silicon Carbide and Related Materials 1995. Proceedings of the Sixth International Conference. IOP Publishing, Bristol, UK; p.645-8, 1996.
  35. P. Morfouli, G. Ghibaudo, T. Ouisse, E. Vogel, W. Hill, V. Misra, P. Mclarty and J.J. Wortman, "Noise Analysis of MOSFETs with ultra thin silicon oxynitrides films prepared by low pressure rapid thermal chemical vapor deposition (LPRTCVD)," ESSDERC 95, Proceedings of the 25th European Solid State Device Research Conference, p 247-50, 1995.
  36. W.L. Hill, E. Vogel, P.K. Mclarty, V. Misra and J.J. Wortman , "N-channel and p-channel MOSFETs with oxynitride gate dielectrics formed using low pressure rapid thermal chemical vapor deposition", Microelectronic Engineering, V. 28, n 1-4, p 269-72, 1995.
  37. P. Morfouli, P. Mclarty, V. Misra, J.R Hauser, J.J. Wortman, T. Ouisse and G. Ghibaudo, "Noise Analysis of Si-MOSFETs with gate oxides deposited by low pressure RTCVD", ESSDERC 94, Proceedings of the 25th European Solid State Device Research Conference, p 313-16, 1994.
  38. G. Lucovsky, T. Yasuda, Y. Ma, S. Hattangady, X-L. Xu-X-L, V. Misra, B. Hornung, J.J. Wortman "Control of Si-SiO2 interface properties in MOS devices prepared by plasma-assisted and rapid thermal processes", Interface Control of Electrical, Chemical, and Mechanical Properties. Symposium. Mater. Res. Soc, Pittsburgh, PA, USA; pp. p.81-92, 1994.
  39. V. Misra, X-L. Xu, J. Wortman "Electrical properties of stacked RTO/RTCVD oxides as gate dielectrics", Rapid Thermal and Integrated Processing III Symposium. Mater. Res. Soc, Pittsburgh, PA, USA; p.187-93, 1994.
  40. R.T. Kuehn, X. Xu, D. Holcombe, V. Misra, J.J. Wortman , J.R. Hauser, Q. Wang and D. Maher "Gate quality oxides prepared by rapid thermal chemical vapor deposition", Gas-phase and Surface chemistry in Electronic Materials Processing Symposium, p 531-6, 1994.
  41. S. Hattangady, X. Xu, M. Watkins, B. Hornung, V. Misra, G. Lucovsky and J.J. Wortman, "A dual function UHV compatible chamber for (i) low temperature plasma assisted oxidation and (ii) high temperature rapid thermal processing of Si based dielectric gate heterostructures", Rapid Thermal and Integrated Processing II, p 339-44, 1993.
  42. X. Xu, V. Misra, G.S. Harris-, L. Spanos, M.C. Ozturk, J.J. Wortman, DM Maher, E.A. Irene, "Characterization of oxygen-doped and non-oxygen-doped polysilicon films prepared by rapid thermal chemical vapor deposition", Rapid Thermal and Integrated Processing II. Mater. Res. Soc, Pittsburgh, PA, USA; p.48-54, 1993.
  43. S. Hattangady, X. Xu, M. Watkins, B. Hornung, V. Misra, G. Lucovsky and J.J. Wortman, "A dual function UHV compatible chamber for low temperature plasma assisted oxidation and high temperature rapid thermal processing of Si based dielectric gate heterostructures", III-V Electronic and Photonic Device Fabrication and Performance, p 581-6, 1993.
  44. F.S. Johnson-, V. Misra, J.J. Wortman, L.R. Martin, G.A. Harris-, D.M. Maher, "Selective removal of silicon-germanium: chemical and reactive ion etching", Silicon-Based Optoelectronic Materials Symposium. Mater. Res. Soc, Philadelphia, PA, USA; p.157-62, 1993.
  45. C.G. Simon, D. P. Griffis, V. Misra, D.A. Ricks, J.J. Wortman and D.E. Brownlee, "Elemental Analysis of Hypervelocity Microparticle Impact Sites on Interplanetary Dust Sensor Surfaces", LDEF-69 Months in Space: Second Post Retrieval Symposium, (NASA CP-3194), April, pp 667-676,1993.


Invited Presentations : Conferences

  1. 2006 International Conference on Simulation of Semiconductor Process and Devices, Monterey, 2006
  2. Electrochemical Society Meeting, Cancun, Oct 2006
  3. Fourth Workshop on Molecular Conduction/Sensing, UVA, July 2006
  4. American Physical Society, Baltimore 2006
  5. Gordon Conference on Chemistry of Electronic Materials, July 2005.
  6. IEEE Semiconductor Interface Specialist Conference, December 2004
  7. US-India Nanoscience Workshop, Bangalore, August 2004
  8. International Reliability Workshop, Austin, Oct 2003.
  9. International Workshop on Gate Insulator, Tokyo, Japan, September 2003.
  10. MRS, Symp. D: CMOS Front-End Materials and Processes, Spring 2003.
  11. The 203rd Electrochemical Society's International Symposium on Science and Technology of Dielectrics in Emerging Fields (F-1), Paris, France, April 27-May 2, 2003.
  12. MRS, Symp. N: Novel Materials & Processes for Advanced CMOS, Fall 2002.
  13. Electrochemical Society Annual Meeting, Philadelphia, May 15th 2002.
  14. SRC Topical Research Conference on Reliability, UT-Austin, October 2001.
  15. Metallic Electrodes and High-K Dielectrics, Symposium on Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Brazil, Sept 2001.
  16. SRC Topical Research Conference on Reliability, UT-Austin, October, 2001.
  17. Electrical Properties of Hafnium Doped SiO2 The Metals & Minerals Society February 2001
  18. Electrical and Material Properties of Metal Silicate Dielectrics and Metal Gate Electrodes for Advanced MOS Devices, Electrochemical Society Mtg., Toronto, May 2000.
  19. Interfacial Properties of Si-Si3N4 in NMOSFETS and PMOSFETs, Materials Research Society Symposium R, April 1999.


Invited Presentations: Industry/Universities/Government

  1. Hybrid Redox Active Molecular Devices, DOD AGED Special Technology Area Review, April 2007.
  2. Hybrid Silicon Molecular Memories, University of California at Riverside, May 2004
  3. Dual Metal Gate Integration, Intel, June 2003.
  4. Dual Gate Metal Electrodes for CMOS, Texas Instruments, October 4th, 2002.
  5. Advanced Micro Devices "NMOS Gate Electrode Selection" Sept. 13th, 2002.
  6. Advanced Gate Electrodes, LSI Logic, San Jose, CA, Sept. 13th, 2002.
  7. Advanced Gate Electrodes, IMEC, Leuven, Belgium, August 2001.
  8. Sematech Gatestack Working Group, July 1999, March 2000, May 2001.
  9. Advanced CMOS Gate Electrodes, IBM Yorktown Heights, September 2000.
  10. Advanced Gate Electrodes, LSI Logic, San Jose, CA, August 2000.
  11. Advanced Gate Stacks, Applied Materials, 2000.
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