Dr. Ki Wook Kim
Director, Nanoscale Quantum Engineering Group
Understanding requires Theory
This is the homepage of Professor Ki Wook Kim's theoretical nanoscale quantum engineering group. Our group explores quantum phenomena of nanoscale structures to discover and engineer effects that can be usefully employed for high performance computing and telecommunications applications, and for advanced concepts in sensor and biophysics devices. We collaborate with experimental groups who investigate the properties of materials and devices of mutual interest.
Our general interests center on semiconductor physics & modeling of electronic and optoelectronic devices in the nanoscale, low dimensional effects, quantum effects, quantum information processing/computing, spin electronics, molecular electronics, bionics/biological computing, nonlinear physics of solids, phonon processes in nanostructures, and collective electron and hole phenomena.
Current Activities
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Quantum Computing The primary goal is to identify the most suitable physical system and/or implementation for quantum computing/information processing and analyze/design the optimum structure. Our proposed design is based on a linear array of quantum dots that are defined by metal electrodes on silicon with voltage applied so that a single electron is trapped at each quantum dot at low temperature. More...
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Spin Electronics/Photonics There is a growing interest in exploring the use of electron spin in semiconductors for a variety of applications ranging from devices based on spin polarized transport to coherent quantum information processors. Information can be stored in both spin and orbital states, however spin has the advantage that it is more insulated against information-destroying environmental interactions than orbital states. More...
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Optoelectronic Nitride Devices Further development of group-III nitride based optoelectronics requires solution of a crucially important problem - obtaining high-density hole currents. It is well established that the difficulties in achieving high hole concentrations mainly originate from high values of activation energy of known acceptors (about 250 meV for Mg in GaN). More...
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Phonon Engineering Assisted by recent advances in materials processing and techniques for phonon generation and control, phonon engineering can significantly enhance the performance of nanostructure solid-state devices. We are seeking to identify, develop, and implement device configurations in which phonons and the coupling of phonons to electrons and holes leads to enhanced device performance. More...
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