Misra Awarded for Engineered High-K Dielectrics and Metal Electrodes

November 11, 2009

Dr. Veena Misra
Dr. Veena Misra

Veena Misra has been awarded $120,000 by the Intel Corp. for research on Investigation of Engineered High-K Dielectrics and Metal Electrodes for Applications in Non-Volatile Memories.

The award will run from October 1st, 2009 to September 30th, 2010.

Research Abstract - This goal of the proposed work is to initiate a study to investigate high-K dielectrics and metal electrodes as blocking oxides and control gates, respectively. The overall goal is to understand fundamental charge transfer mechanisms through high-K IPD under program/erase (P/E) and retention conditions. These objectives will be met by conducting the following research tasks:  Explore the role of interfaces, i.e. between IPD and charge storage layer and also between IPD and metal control gate and evaluate the impact on P/E and Retention.  The second task is to investigate IPD composition, microstructure, anneals and charges on the P/E and retention characteristics.  This will include single layer IPD vs. multilayer IPD for barrier engineering.  The third task is to explore the role of work function of the control gate work function on erase and retention characteristics; Evaluate electron back tunneling from gate into the floating gate and hole tunneling in the opposite direction.