ECE Student Jaehoon Park Receives Best Presentation Award

[ubermenu config_id=”main” menu=”84″] NEWSROOM ECE Student Jaehoon Park Receives Best Presentation AwardJan 8, 2010 Jaehoon Park along with other NCSU students were selected for a Best Presentation Award at the International Semiconductor Device Resear …


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NEWSROOM

ECE Student Jaehoon Park Receives Best Presentation Award

Jan 8, 2010

Jaehoon Park Jaehoon Park along with other NCSU students were selected for a Best Presentation Award at the International Semiconductor Device Research Symposium (ISDRS).  Jaehoon is advised by Doug Barlage in Electrical and Computer Engineering and Mark Johnson  of Materials Science Engineering has been his Co-Chair.   The topic of his talk was on Analytical Model of Source Injection for N-type Enhancement Mode GaN-based Schottky Source/Drain MOSFET.

The biennial International Semiconductor Device Research Symposium focuses on exploratory research in electronic and photonic materials and devices. Areas such as novel device concepts, processing technologies, advanced modeling, nanotechnology, nanoelectronics, wide band-gap semiconductors, MEMS materials and devices, oxides and dielectrics, magnetic materials and devices, organic and polymer opto-electronic materials and devices, ultra high frequency devices & RF effects, and high power-high temperature devices are included. The Symposium brings together diverse participants in multidisciplinary areas, and provides a forum for extended personal scientific interaction for engineers, scientists, and students working in the field of advanced electronic materials and device technologies.

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