Dr. Salah Bedair
Salah Bedair has been awarded $375,811 by the National Science Foundation for research on Growth of Low Defect Density III- Nitride Compounds on Nanowires. The award will run from September 15th, 2011 to August 31st, 2014.
Research Abstract - We plan to investigate the processes of defect reductions in III-nitride compounds grown on sapphire substrates. We also plan to investigate the accommodations of lattice mismatched defects by the growth on nanowires substrates. We will use several new concepts and approaches based on the overgrowth of coalescence films on low defect density nano wires of GaN and AlGaN. These nanowires will etched from MOCVD grown films.