Dr. Subhashish Bhattacharya Receives Award For Research from GE Global Research

July 06, 2012

Dr. Subhashish Bhattacharya
Dr. Subhashish Bhattacharya

Dr. Subhashish Bhattacharya has been awarded $234,444 by the GE Global Research for research on Resilient Multiterminal HVDC Using High Voltage High Frequency Electronics Capability.

The award will run from April 4th, 2012 to January 22nd, 2015.

Research Abstract

GE Global Research in collaboration with North Carolina State University and Rensselaer Polytechnic Institute proposes a resilient multi-terminal current-link based HVDC transmission technology, to enable dynamic routing of electric power with high efficiency and reliability. The proposed technology is modular which allows system scalability to achieve any voltage and power rating. Each module is based on a high-voltage high-frequency power conversion topology in which the galvanic isolation is achieved by a high-frequency (20-50kHz) step-up transformer. Hence, the low-frequency grid side transformer is eliminated which results significant reduction in the system footprint. Due to current-link based power transmission, the proposed technology is naturally fault tolerant and hence it is suitable for multi-terminal HVDC system.

The nature of the proposed work includes both proof of concept and early stage device prototyping categories.

Following tasks will be executed to satisfy the technical performance targets of the proposed technology:

  • Circuit level analysis, design and control of the module
  • Steady-state and dynamic analysis of the system
  • Real-time demonstration of the system based on a commercial RTDS platform
  • Experimental prototype and demonstration of a three terminal, 10kV, 100kW each, multi-terminal HVDC network
  • Demonstration of fault modes and fail-safe operation