Campus Box 7911
NC State University
Raleigh, NC 27695-7911
Dr. Doug Barlage
Adjunct Associate Professor
- University of Illinois at Urbana-Champaign
Ph.D. Electrical Engineering (1997)
M.S. Electrical Engineering (1994)
Wright State University
B.S. Engineering Physics (1992)
| Primary Research Interests
- Nanoelectronics and Photonics (Including III - V Materials and Devices, Nanotechnology, Silicon Devices and Fabrication)
| Other Research Interests
- Electronic Circuits and Systems (Including Analog Circuits, Digital Circuits, Microwave Devices and Circuits)
- Power Electronics and Power Systems (Including Power Semiconductor Devices)
| Selected Publications
- D. Barlage, R. Arghavani, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, A. Murthy, B. Roberds, P. Stokley and R. Chau, High-Frequency Response of 100nm Integrated CMOS tTransistors with high-K Gate Dielectrics, IEDM 2001.
- R. Chau, J. Kavalieros, Roberds-B, R. Schenker, D. Lionberger; D. Barlage; B. Doyle, R. Arghavani, A. Murthy, G. Dewey and P. Stokley; 30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays, International Electron Devices Meeting 2000. Technical Digest. IEDM IEEE, Piscataway, NJ, USA; 2000; 871 pp. 45-8
- D.W. Barlage, J. T.O'Keeffe, J. T. Kavalieros, M.M. Nguyen, R.S. Chau, Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circui, IEEE-Electron-Device-Letters. vol.21, no.9; Sept. 2000; p.406-8.
- D.W. Barlage, M. S. Heins, J.H. Mu, M.T. Fresina, D.A. Ahmari, Q. J. Hartman, G. E. Stillman, M. Feng, Ultra low power (
- M. S. Heins, D. W. Barlage, M. T. Fresina, D. A. Ahmari, Q. J. Hartmann, G. E. Stillman and M. Feng, Low phase noise Ka-Band VCOs using InGaP/GaAs HBTs and coplanar waveguide, 1997 IEEE MTT-S International Microwave Symposium.
| Awards and Honors
- 2006 - NSF Career Award
- 2002 - MIT TR 100, One of 100 outstanding innovators under the age of 35 class for key contributions in the demonstration of 30nm gate length transistors
- 2001 - Intel Divisional Award "World's first sub-70nm Depleted Substrate Transistor"
- 2000 - Intel Corporate Achievement Award (2000) "For the demonstration of 30nm CMOS transistors with world record performance"
- 2000 - Intel Divisional Award "World Record CMOS performance with 30nm transistors"
- 1999 - Intel Divisional Award "High Yield Dual Gate Oxide Coppermine CPU"
- 1998 - Gate Oxide Methodology
- 1996 - Intel Foundation University Fellowship (1996-97)
- 1992 - Outstanding Student - Engineering Physics 1992
- 1992 - Wright State University Suma Cum Laude
- 1990 - Wright State Presidential Scholar 1990-91
- 1989 - Outstanding Physics Student - 1988-89 (Top Grade in University for Sophomore Physics)
- 1988 - Wright State Honors Scholar 1988-1992