Contact Information

Address
421 Monteith
Campus Box 7920
NC State University
Raleigh, NC 27695-7920
Locate on Campus Map
Phone
919-515-5153
Fax
919-515-3027

Dr. Carlton Osburn

Professor Emeritus

| Biography

Major research interests include materials, fabrication technologies, and device design for leading edge silicon devices, including: High-k Gate Stacks, Metal Silicide Technology, Ultra Shallow Junctions, New Device Technologies, Hot Carrier Injection and Trapping, and Microsensors

| Education

  1. 1970 - PhD in Electrical Engineering, Purdue University, W. Lafayette, IN
  2. 1966 - MS in Aeronautics Astronautics & Engineering Sciences, Purdue University, W. Lafayette, IN
  3. 1965 - BS in Engineering Sciences, Purdue University, W. Lafayette, IN

| Primary Research Interests

  1. Nanoelectronics and Photonics (Including Silicon Devices and Fabrication)

| Selected Publications

  1. "Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center," C.M. Osburn, S.A. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A.I. Kingon, J. Lee, D.J. Lichtenwalner, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, R.J. Nemanich, G.N. Parsons, D.G. Schlom, S. Stemmer, R.M. Wallace, and J. Whitten, ECS Transactions, 3(3), 389 (2006). Invited
  2. "Front End Processes Required for Continued CMOS Scaling," J. Butterbaugh and C.M. Osburn, Solid State Technology, 49(2), 46 (2006). Invited
  3. "Integration Issues with High k Gate Stacks," C.M. Osburn, S.K. Han, I. Kim, S.A. Campbell, E. Garfunkel, T. Gustafson, J. Hauser, T.-J. King, Q. Liu, P. Ranade, A. Kingon, D.-L. Kwong, S.J. Lee, C.H. Lee, J. Lee, K. Onishi, C.S. Kang, R. Choi, H. Cho, R. Nieh, G. Lucovsky, J.G. Hong, T.P. Ma, W. Zhu, Z. Luo, J.P. Maria, D.Wicaksana, V. Misra, J.J. Lee, Y.S. Suh, G. Parsons, D. Niu, and S. Stemmer, Proceedings of International Symp on Silicon ULSI Science and Technology, The Electrochemical Society, PV 03-6, 375 (2003). Invited.
  4. "Vertically-Scaled MOSFET Gate Stacks and Junctions: How Far Are We Likely to Go?," C.M. Osburn, J.R. Hauser, S. Banerjee, C. Hu, T.J. King, A. Kingon, D.-L. Kwong, J. Lee, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, M.C. Ozturk, and G. Parsons, IBM J. Res. and Develop., 46 (2/3), 299 (2002). Invited
  5. "Impact of Super-Steep-Retrograde Channel Profile on the Performance of Scaled Devices," I.De and C.M. Osburn, IEEE Trans. Electron Dev., 46(8), 1711 (1999).

| Awards and Honors

  • 1998 - IEEE Fellow
  • 1993 - Fellow of the Electrochemical Society
  • 1991 - Electronics Division Award of the Electrochemical Society
  • 1988 - Maurice Simpson Technical Editors Award of the Institute of Environmental Sciences
  • 1975 - Eta Kappa Nu, Outstanding Young Electrical Engineers
  • 1975 - TD Callinan Award of the Dielectrics nd Insulation Division of the Electrochemical Society