Multi-Tb/s Widely-Tunable DWDM Coherent Transmitter and Receiver Photonic Integrated Circuits

SpeakerFred A. Kish, Jr.
Organization Infinera Corporation
Location136 Monteith Research Center (MRC)
Start Date May 8, 2017 1:30 PM
End Date May 8, 2017 2:30 PM

The last two decades have seen the emergence and wide-spread adoption of commercial photonic integrated circuits (PICs) in optical communications networks. Such PICs integrate hundreds of optical elements monolithically, and more recently utilize coherent modulation formats for improved spectral efficiency and transmission reach. These advances in PIC technology have contributed to more than an order of magnitude increase in chip capacity every decade, a trend that started with the development of electroabsorption-modulated lasers (deployed commercially for 2.5 Gb/s operation in 1996), and has continued through the commercial introduction of the system-on-chip (SOC) DWDM PICs in 2004 (operating at 100 Gb/s) and coherent SOC PICs in 2011 (operating at 500 Gb/s).

In this talk, we demonstrate both transmitter (Tx) and receiver (Rx) coherent PICs, each integrating for the first time per-channel widely tunable lasers that enable continuous independent channel-level control across the entire C-band. Furthermore, this family of PICs has increased per-channel bit rate, with capability demonstrated at 33 and 44 Gbaud for polarization-multiplexed QPSK, 8-QAM and 16- QAM coherent modulation. Fourteen channel Tx and Rx PICs operating at 44 Gbaud result in record levels of integration of widely-tunable lasers, the first widely-tunable laser integrated in a multi-channel Tx and Rx, as well as record demonstrated capacity of 4.9 Tb/s capacity. The widely-tunable lasers integrated into the Tx and Rx PICs are shown to have excellent performance with over 35 nm tuning range and less than 200 kHz linewidth. RF data is provided for both fully packaged commercial transceiver modules which operate at 1.2 Tb/s (6 channels x 200 Gb/s per channel). The SOC DWDM multi-channel PIC platform is capable of scaling to significantly higher baud and symbol rates. Accordingly, we have realized 88 Gbaud, 16-QAM multi-channel and widely wavelength tunable coherent transmitter and receiver PICs, demonstrating a capacity in excess of 700 Gb/s per-channel over an 80 km unamplified link.

Fred A. Kish, Jr. is Senior Vice President of the Optical Integrated Circuit Group at Infinera Corp. He received his B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Illinois at Urbana-Champaign in 1988, 1989, and 1992, respectively. His Ph.D. research work (under Nick Holonyak, Jr.) is part of the core Al-bearing III-V native-oxide technology that has enabled the development of the highest performance VCSELs and has been licensed to VCSEL manufacturers throughout the world.

From 1992-1999, he was at Hewlett-Packard where he co-invented and led the commercialization of the highest performance (efficiency) red-orange-yellow visible LEDs produced at the time (wafer-bonded transparent-substrate AlGaInP LEDs). The efficiencies of these devices exceeded those of incandescent and halogen lamps with products based on this technology resulting in over $2B in revenue to date. From 1999-2001, he was with Agilent Technologies as the III-V Department Manager.

In 2001, he joined Infinera Corporation where he co-invented and led the effort to research, develop, and commercialize the first practical (commercially deployed) large-scale PICs and first commercial fully integrated system-on-a-chip for optical communications. The large-scale InP PICs are at the core of Infinera’s optical network products and have been the enabling technology behind over $4B in PIC-based networking product sales.

Dr. Kish is a Fellow of the OSA and IEEE and a member of the National Academy of Engineering. His awards include the IEEE David Sarnoff Award, the IEEE LEOS Engineering Achievement Award, the OSA Adolph Lomb Award, and the International Symposium on Compound Semiconductors Young Scientist Award. He has coauthored over 100 U.S. patents, over 150 peer-reviewed journal and conference publications, and 4 book chapters on optoelectronic devices and materials. 

  May 2017
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