500-900V Super Junction MOSFET Technology & Applications

SpeakerSpeaker Panel
Organization Infineon Technologies
LocationPowerAmerica Seminar room
Start Date March 2, 2018 8:45 AM
End Date March 2, 2018 10:15 AM

Abstract:  Infineon is the inventor of super-junction (CoolMOS) silicon technology broke the theoretical limit of Rdson/unit area which enabled significant improvements in HV (500-900V) power electronics.    This presentation will provide an overview of SJ technology, review attributes of devices including gate charge, Coss, FOM and body diode characteristics.  Discussions will touch on popular application topologies and with respect to circuit performance & comparisons and discuss why some families are better than others for hard verses soft switching.   Integral to these discussions, aspects of packaging will be covered with emphasis on kelvin source connections and surface mount packages as well as optimized driver ICs.


  • Winfried Kaindl, Senior Project Manager R&D
  • Ralf Otremba, Principal Package Concept Engineering
  • Franz P. Stückler, Application and high voltage CoolMOS concept engineering
  • Vincent Chi Zhang, Application engineering in MOSFET gate driver
  • Stefan Gamerith, Senior Marketing Manager


  March 2018
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