Salah Bedair

Dr. Bedair currently investigates semi-conductor materials and devices including novel growth techniques such as atomic layer epitaxy, laser-assisted diposition, molecular beam epitexy and chemical vapor diposition. He also studies optical, electrical and structural properties of semiconductors, epitaxial insulators and quantum well structures. Optical and microwave devices such as detectors, wave guides, solar cells, light emitting diodes, semiconductor light bulbs and modulation doped field effect transistors are currently considered in Dr. Bedair's lab.

Education

1960 BS in Electrical Engineering, Alexandria University
1965 MS in Nuclear Engineering, Univ. of Calif. Berkeley
1969 PhD in Engineering Science, Univ. of Calif .Berkeley

Awards & Honors

2015 - Alexander Quarles Holladay Medal for Excellence (NC State)
1998 - Alumni Association Distinguished Graduate Professorship (NC State)
1992 - IEEE Fellow, Contribution to Atomic Layer Epitaxy
1992 - R J Reynolds for Excellence in Teaching, Research and Extension (NC State)
1988 - ALCOA Foundation Distinguished Engineering Research Award (NC State)
1986 - Department of Energy Award (Development of Cascade Solar Cells)

Publications

• Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch (2018)
• 100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80% (2017)
• Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures (2017)
• Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: experimental and modeling results (2016)
• Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2) (2016)
• InGaP-based quantum well solar cells (2016)
• High performance tunnel junction with resistance to thermal annealing (2016)
• Strain-balanced InGaAsP/GaInP multiple quantum well solar cells with a tunable bandgap (1.65-1.82 eV) (2016)
• High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface (2016)
• InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties (2016)