Salah Bedair

Dr. Bedair currently investigates semi-conductor materials and devices including novel growth techniques such as atomic layer epitaxy, laser-assisted diposition, molecular beam epitexy and chemical vapor diposition. He also studies optical, electrical and structural properties of semiconductors, epitaxial insulators and quantum well structures. Optical and microwave devices such as detectors, wave guides, solar cells, light emitting diodes, semiconductor light bulbs and modulation doped field effect transistors are currently considered in Dr. Bedair's lab.

Education

1960 BS in Electrical Engineering, Alexandria University
1965 MS in Nuclear Engineering, Univ. of Calif. Berkeley
1969 PhD in Engineering Science, Univ. of Calif .Berkeley

Awards & Honors

2015 - Alexander Quarles Holladay Medal for Excellence (NC State)
1998 - Alumni Association Distinguished Graduate Professorship (NC State)
1992 - IEEE Fellow, Contribution to Atomic Layer Epitaxy
1992 - R J Reynolds for Excellence in Teaching, Research and Extension (NC State)
1988 - ALCOA Foundation Distinguished Engineering Research Award (NC State)
1986 - Department of Energy Award (Development of Cascade Solar Cells)

Publications

• Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate (2019)
• Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW (2019)
• Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities (2019)
• Quantum Well Solar Cells: Principles, Recent Progress, and Potential (2019)
• Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch (2018)
• Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic (2018)
• Tunnel Junctions for III-V Multijunction Solar Cells Review (2018)
• 100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80% (2017)
• Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures (2017)
• Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2) (2016)